スポンサーリンク
Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan | 論文
- High Performance of GaN-Based Light Emitting Diodes Grown on 4-in. Si(111) Substrate
- Metal Organic Chemical Vapor Deposition Growth and Characterization of AlInN-Based Schottky Ultraviolet Photodiodes on AlN Template
- Deep Traps in InAlN Lattice-Matched to GaN Grown by Metal Organic Chemical Vapor Deposition Studied by Deep-Level Transient Spectroscopy
- Effect of Al0.06Ga0.94N/GaN Strained-Layer Superlattices Cladding Underlayer to InGaN-Based Multi-Quantum Well Grown on Si(111) Substrate with AlN/GaN Intermediate Layer
- Epitaxial Graphene on Si(111) Substrate Grown by Annealing 3C-SiC/Carbonized Silicon (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
- Characterization of GaN-Based Light Emitting Diodes Grown on 4-in. Si(111) Substrate
- Effect of Growth Temperature on Structural Quality of InAlN Layer Lattice Matched to GaN Grown by Metal Organic Chemical Vapor Deposition
- Infrared Study on Graded Lattice Quality in Thin GaN Crystals Grown on Sapphire
- Origin and Appearance of Defective Pits in the Gate--Drain Region during Reliability Measurements of AlGaN/GaN High-Electron-Mobility Transistors on Si