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Research Center for Advanced Science and Technology (RCAST), The University of Tokyo | 論文
- Si/1ML-Ge/Si(001) Interface Structure Characterized by Surface X-Ray Diffraction and X-Ray Standing-Wave Method
- Photoreflectance Study of GaAs/GaAsP Strained-Barrier Quantum Well Structures
- Dependence of Band Offsets on Elastic Strain in GaAs/GaAs_P_x Strained-Layer Single Quantum Wells
- Compositional Latching in GaAs_P_x/GaAs Metalorganic Vapor Phase Epitaxy
- Optical coherence tomography by all-optical MEMS fiber endoscope
- MBE-Related Surface Fegregation of Dopant Atoms in Silicon : Condensed Matter
- Stereoregular Polymerization within Template Nanospaces
- Device Linear Improvement Using SiGe/Si Heterostructure Delta-Doped-Channel Field-Effect Transistors
- Quantitative Evaluation of Silicon Displacement Induced by Arsenic Implantation Using Silicon Isotope Superlattices
- Strain Relaxation and Surface Morphology of Ultrathin High Ge Content SiGe Buffers Grown on Si(001) Substrate
- Fabrication of InGaAs Vertical-Cavity Surface-Emitting Laser by Molecular Beam Epitaxy and Its Room-Temperature Operation on (411)A GaAs Substrates
- Mobility Enhancement in Strained Ge Heterostructures by Planarization of SiGe Buffer Layers Grown on Si Substrates
- Photoluminescence of Erbium Implanted in SiGe
- Fabrication of GaAs Ultrafine Gratings by Single-Layer-Masked SiCl_4 Reactive Ion Etching
- Disappearance of the Breakdown of Quantum Hall Effects in Short Devices
- Optical Properties of Excitons in Semiconductor Quantum Wells
- Oscillator Strength of Excitons in InGaAs/GaAs Quantum Wells
- Nonlinear Optical Coefficient of AlAs Thin Film on GaAs Substrate
- Deposition of SiO_2 Films on Strained SiGe Layer by Direct Photo Chemical Vapor Deposition
- Strain Relaxation in MBE-Grown Si_Ge_x/Si(100) Heterostructures by Annealing