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Research Center For Interface Quantum Electronics Hokkaido University | 論文
- Optical Characterization of InAs Quantum Dots Fabricated by Molecular Beam Epitaxy
- Optical Characterization of InAs Quantum Dots Fabricated by Molecular Beam Epitaxy
- A High Performance p-Channel Transistor:β-MOS FET
- A High Performance p-Channel Transistor : β-MOS FET
- Novel Approach for Lateral Current Confinement in Vertical Resonant Tunneling Devices
- Fabrication of InAs Single-Crystal Free-Standing Wires for the Study of Electron and Thermal Transport
- Indium Arsenide Quantum Wires Fabricated by Electron Beam Lithography and Wet-Chemical Etching
- Complementary InAs n-Channel and GaSb p-Channel Quantum Well Heterojunction Field-Effect Transistors
- Scanning Tunneling Microscope Study of (001)InP Surface Prepared by Gas Source Molecular Beam Epitaxy
- Novel Formation Method of Quantum Dot Structures by Self-Limited Selective Area Metalorganic Vapor Phase Epitaxy
- Growth Behavior and Mechanism of Alkyl-Desorption-Limited Epitaxial Growth of GaAs on Exactly Oriented and Vicinal Substrates
- Mechanism of Multiatomic Step Formation durirng Metalorganic Chemical Vapor deposition Growth of GaAs on (001) Vicinal Surface Studied by Atomic Force Microscopy
- Effects of Phosphorus Pressure on Growth Rate and Layer Quality of InP Grown by Gas Source Molecular Beam Epitaxy
- Ordered Quantum Dots : A New Self-Organizing Growth Mode on High-Index Semiconductor Surfaces
- Ordered Quantum Dots: Atomic Force Microscopy Study of a New Self-Organizing Growth Mode on GaAs (311)B Substrates
- Initial Stage of InGaAs Growth on GaAs Multiatomic Steps by MOVPE
- Temperature Dependence of Si Delta-Doping on GaAs Singular and Vicinal Surfaces in Metalorganic Vapor Phase Epitaxy
- Characterization of Potential Modulation in Novel Lateral Surface Superlattices Formed on GaAs Multiatomic Steps
- Real-Time Observation of Electron-Beam Induced Mass Transport in Strained InGaAs/AlGaAs Layers on GaAs (100) and (311)B Substrates
- Characterization of Potential Modulation in Novel Lateral Surface Superlattices Formed on GaAs Multiatomic Steps