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Process Technology Development Division, Renesas Technology Corp. | 論文
- Local Bonding Structure of High-Stress Silicon Nitride Film modified by UV Curing for Strained-Silicon Technology beyond 45nm Node SoC Devices
- Study of Stress from Discontinuous SiN Liner for Fully-Silicided Gate Process
- Low temperature divided CVD technique for TiN metal gate electrodes of p-MISFETs
- A New Divided Deposition Method of TiN Thin Films for MIM Capacitor Applications
- Novel Shallow Trench Isolation Process from Viewpoint of Total Strain Process Design for 45nm Node Devices and Beyond
- Investigation of the Divided Deposition Method of TiN Thin Films for Metal–Insulator–Metal Capacitor Applications
- Layout-Independent Transistor with Stress-Controlled and Highly Manufacturable Shallow Trench Isolation Process
- Novel Shallow Trench Isolation Process from Viewpoint of Total Strain Process Design for 45 nm Node Devices and Beyond