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Process Development Division Fujitsu Ltd. | 論文
- Cleaning of Silicon Surfaces by NF_3-Added Hydrogen and Water-Vapor Plasma Downstream Treatment
- Cleaning of Silicon Surfaces by NF_3 Added Hydrogen and Water Vapor Plasma Downstream Treatment
- Native Oxide Removal on Si Surfaces by NF_3-Added Hydrogen and Water Vapor Plasma Downstream Treatment
- Effects of H_2O on Atomic Hydrogen Generation in Hydrogen Plasma
- Panel-Type Semiconductor Optical Modulator Using Electron Depleting Absorption Control
- Hydrogen Molecules in Defective Silicon
- Formation of Hydrogen Molecules in n-Type Silicon
- Hydrogen Passivation of Donors and Hydrogen States in Heavily Doped n-Type Silicon
- Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
- Current and Temperature Dependences of Electroluminescence of InGaN-Based UV/Blue/Green Light-Emitting Diodes
- Surface Cleaning of Si-Doped/Undoped GaAs Substrates
- Real-Time Observations on the Cleaning Process of Patterned GaAs Substrates
- Influence of Electrode Contacts on Leakage Current of SrTiO_3 Capacitors
- RuO_2 Thin Films as Bottom Electrodes for High Dielectric Constant Materials
- Calculation of Characteristic X-rays in Diagnostic X-ray Spectrum
- Characterization of GaAs-(001) Surface Photo-Oxide Formed by Visible-Light Irradiation
- Effect of Electron Energy Distribution on Bremsstrahlung Spectrum
- Porous β-SiC Fabrication by Electrochemical Anodization
- Blueshifts in the Photoluminescence of Porous Si by Immersion in Deionized Water
- Comparison of Photoluminescence Lifetimes between As-Prepared and Dry-Oxidized Porous Si