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Process Development Division Fujitsu Ltd. | 論文
- Effect of Atomic Hydrogen on GaAs (001) Surface Oxide Studied by Temperature-Programmed Desorption
- Characterization of Oxidized GaAs (001) Surfaces Using Temperature Programed Desorption and X-Ray Photoelectron Speetroscopy
- New Cleaning Solution ; Mixture of HF/HCl and Pure Water Containing a Little Dissolved Oxygen
- Characterization of Cleaning Technology for Silicon Surfaces by Hot Pure Water Containing Little Dissolved Oxygen
- Thickness-Deconvolved Structural Properties of Thermally Grown Silicon Dioxide Film
- Characterization of a Cleaning Technology for Silicon Surface by Hot Pure Water Containing a Little Dissolved Oxygen
- In-Situ Observation of Oxygen Exposed Hydrogen Terminated Silicon Surfaces
- Effects of Dissolved Oxygen in HF Solutiom on Silicon Surface Morphology
- Sm-Co-Cu-Fe-Ti Magnets
- Iron Gettering Controlled by Size and Density of Oxygen Precipitates in Czochralski-Grown Silicon
- Iron Gettering Controlled by Size and Density of Oxygen Precipitates in CZ Silicon
- High-Rate Bias Sputtering Filling of SiO2 Film Employing Both Continuous Wave and Time-Modulated Inductively Coupled Plasmas