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Optoelectronics Joint Research Laboratory | 論文
- Bromine Adsorption on Supported Palladium Ultrafine Particles Studied by Br K-Edge EXAFS Spectroscopy
- Surface Structure of N/Pd(100)-c(2 × 2) Determined by Tensor Low Energy Electron Diffraction Analysis
- Structure, Composition, and Vibrational Property of Iodine-Doped Polyvinyl Alcohol Studied by Temperature-Dependent I K-Edge Extended X-Ray-Absorption Fine Structure
- Local Structures of RbBr_xCl_ and CuBr_xCl_ Solid Solutions Studied by Temperature-Dependent Br K-Edge Extended X-Ray-Absorption Fine-Structure Spectroscopy
- Fabrication of One-Dimensional Silicon Nanowire Structures with a Self-Aligned Point Contact
- Surface Modification of Niobium (Nb) by Atomic Force Microscope (AFM) Nano-Oxidation Process
- Fabrication and Characterization of Nb/Nb Oxides-Based Single Electron Transistors (SETs)
- Side Gate Single Electron Transistor with Multi-Islands Structure Operated at Room Temperature Made by STM/AFM Nano-Oxidation Process
- Room Temperature Operation of Single Electron Transistor Made by STM Nano-Oxidation Process
- V-Shaped Gate High Electron Mobility Transistor (VHEMT)
- Accumulation-Mode GaAlAs/GaAs Bipolar Transistor
- Novel Ultrasonic Soldering Technique for Lead-Free Solders
- Construction of a Scanning Tunneling Microscope for Electrochemical Studies
- Digital Etching Using KrF Excimer Laser: Approach to Atomic-Order-Controlled Etching by Photo Induced Reaction
- Reversible Reconstruction Changes in GaAs Surfaces due to Hydrogen Termination
- Study of Surface Processes in the Digital Etching of GaAs
- X-Ray Mask Distortion Induced in Back-Etching Preceding Subtractive Fabrication: Resist and Absorber Stress Effect
- Reduction of X-Ray Irradiation-Induced Pattern Displacement of SiN Membranes Usirng H^+ Ion Implantation Technique
- New Computed Tomography Algorithm of Electrostatic Force Microscopy Based on the Singular Value Decomposition Combined with the Discrete Fourier Transform
- Simulated Computed Tomography for the Reconstruction of Vacancies Using an Atomic Force Microscope Image