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Optoelectronics Joint Research Laboratory | 論文
- Feasibility Study on a Novel Type of Computerized Tomography Based on Scanning Probe Microscope
- XANES Analysis of Optical Activation Process of Er in Si:Er2O3 Thin Film:Electronic and Structural Modifications around Er (Proceedings of the Second International Conference on SRMS(Synchrotron Radiation in Materials Science)(2))
- Preparation of Twin- and Crack-Free LiNbO_3 Films by Pulsed Laser Ablation Using Nucleation Process at High Temperature : Surfaces, Interfaces, and Films
- Rotational Honeycomb Epitaxy of Ru Thin Films on Sapphire (0001) Substrate : Surfaces, Interfaces, and Films
- 層状ペロブスカイト自己組織化膜を用いた有機FETの発光および電気特性
- Growth and Resistivity Characteristics of Undoped Semi-Insulating GaAs Crystals with Low Dislocation Density
- Growth of Undoped Semi-Insulating GaAs Single Crystal : C-2: III-V CRYSTALS/JOSEPHSON JUNCTION
- Observation of GaAs(110) Surface by an Ultrahigh-Vacuum Atomic Force Microscope
- Quantized Conductance of a Silicon Wire Fabricated by Separation-by-Implanted-Oxygen Technology
- Photoquenching and Recovery Effects of EL2 Absorption in GaAs : Optical Properties of Condensed Matter
- Above Band-Gap Excitation Process of the 0.6 eV Luminescence Band in GaAs
- Tetragonal Lattice Distortion and Tensile Stress in GaAs Layers Grown on Si Substrates by MOCVD
- Misfit and Threading Dislocations in GaAs Layers Grown on Si Substrates by MOCVD
- Characterization of Lattice Defect Structures at GaAs/Si Interface by Transmission Electron Microscopy
- Study of 0.8 eV Deep Level Photoluminescence in Undoped LEC Semi-Insulating GaAs
- Study of Two Different Deep Levels in Undoped LEC SI-GaAs by Photoluminescence Spectroscopy
- Reactive Ion-Beam Etching of InP with Cl_2
- Measurement of Finite Amplitude Ultrasound Wave Fields by Light Beam CT : Acoustical Measurements and Instrumentation
- Optical Observation of Finite Amplitude Ultrasonic Waveform : Acoustical Measurements and Instrumentation
- Effect of Melt Stoichiometry on Electrical Activation Uniformity of Si-Implanted Layers in Undoped Semi-Insulating GaAs