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Optoelectronics Joint Research Laboratory | 論文
- X線Pole Figure法による強誘電性有機低分子薄膜の精密構造解析(有機EL及び関連有機材料, 低温poly-Siと有機TFT技術と一般)
- X線Pole Figure法による強誘電性有機低分子薄膜の精密構造解析(有機EL及び関連有機材料, 低温poly-Siと有機TFT技術と一般)
- X線 Pole Figure 法による強誘電性有機低分子薄膜の精密構造解析
- Improvement of Coupling-Out Efficiency of Organic Light-Emitting Devices by Dot Array Structures with Organic Layer(Fabrication of Organic Nano-devices)(Recent Progress in Organic Molecular Electronics)
- Orientation Control of High-Density Polyethylene Molecular Chains Using Atomic Force Microscope
- Structures and Ferroelectric Natures of Epitaxially Grown Vinylidene Fluoride Oligomer Thin Films
- Orthovanadate Stimulates cAMP Phosphodiesterase 3 Activity in Isolated Rat Hepatocytes through Mitogen-Activated Protein Kinase Activation Dependent on cAMP-Dependent Protein Kinase(Biochemistry/Molecular Biology)
- Observation of X-Ray Diffraction Spots from the (√×√)R30°Bi Structure on the Si(111) Surface under the Condition of Large Incidence Angle
- Mechanism of Potential Profile Formation in Silicon Single-Electron Transistors Fabricated Using Pattern-Dependent Oxidation : Semiconductors
- Effect of Oxidation-Induced Strain on Potential Profile in Si SETs Using Pattern-Dependent Oxidation (PADOX)
- Fabrication of SiO_2/Si/SiO_2 Double Barrier Diodes using Two-Dimensional Si Structures
- Electron Tunneling from a Quantum Wire Formed at the Edge of a SIMOX-Si Layer
- Energy Eigenvalues and Quantized Conductance Values of Electrons in Si Quantum Wires on {100} Plane
- Novel Fabrication Technique for a Si Single-Electron Transistor and Its High Temperature Operation
- Comparison of Lateral Resolution of Fine Stripes Beryllium and Boron Implanted by Focused Ion Beam in Si-Doped AlGaAs/GaAs Multiquantum Wells
- Electrical and Optical Properties of Si Doped GaAs Grown by Molecular Beam Epitaxy on (311) Substrates
- Disordering of Surface Regions in Si-Implanted Superlattices of GaAs/AlGaAs
- Fabrication of Submicron Grating Patterns Usinc Compositional Disordering of AlGaAs-GaAs Superlattices by Focused si Ion Beam Implantation
- Fabrication of Index-Guided AlGaAs MQW Lasers by Selective Disordering Using Be Focused Ion Beam Implantation
- SIMS Study of Si-Be Co-doping Effects for Suppression of Compositional Disordering in AlGaAs-GaAs Superlattices