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Ntt Photonics Lab. Kanagawa Jpn | 論文
- Photoluminescence and X-Ray Photoelectron Study of AlGaAs/GaAs Near-Surface Quantum Wells Passivated by a Novel Interface Control Technique
- More than 10^3 Times Photoluminescence Intensity Recovery by Silicon Interface-Control-Layer-Based Surface Passivation of Near-Surface Quantum Wells
- Novel Surface Passivation Scheme for Compound Semiconductor Using Silicon Interface Control Layer and Its Application to Near-Surface Quantum Welts
- Upper-bound Frequency for Measuring mm-Wave-Band Dielectric Characteristics of Thin Films on Semiconductor Substrates
- High-Frequency Characteristics of SrTiO_3 Thin Films in the mm-Wave Band
- Measurement of High-Frequency Dielectric Characteristics in the mm-Wave Band for Dielectric Thin Films on Semiconductor Substrates
- High-Frequency Characteristics of SrTiO_3 Thin Films in the mm-Wave Band
- Si Oxynitridation with Helicon-Wave Excited Nitrogen Plasma:Effects of Plasma Divergence and Concentration on Substrates
- Oxynitridation of Silicon Using Helicon-Wave Excited and Inductively-Coupled Nitrogen Plasma
- Effect of Epitaxial Layer Crystal Quality on DC and RF Characteristics of AlGaN/GaN Short-Gate High-Electron-Mobility Transistors on Sapphire Substrates
- Intrinsic Transit Delay and Effective Electron Velocity of AlGaN/GaN High Electron Mobility Transistors
- Improved Carrier Confinement by a Buried p-Layer in the AlGaN/GaN HEMT Structure
- High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal-Organic Vapor-Phase Epitaxy
- The InP-HEMT IC Technology for 40-Gbit/s Optical Communications
- The InP-HEMT IC Technology for 40-Gbit/s Optical Communications
- Frequency Dispersion in Drain Conductance of InAlAs/InGaAs HEMTs and Its Correlation with Impact Ionization
- Gate and Recess Engineering for Ultrahigh-Speed InP-Based HEMTs (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- High-Resolution Scanning Electron Microscopy Observation of Electrochemical Etching in the Formation of Gate Grooves for InP-Based Modulation-Doped Field-Effect Transistors
- Annealing Behavior of Twin Domains in YBa_2Cu_3O_x Crystals : Condensed Matter
- Quantum-Well Photoemission Media for Terabit/inch^2 Ultrahigh-Density Optical Storage Employing Probe-Collection Tunneling-Electron Luminescence(Optics and Quantum Electronics)