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Ntt Lsi Laboratories Nippon Telegraph And Telephone Corporation | 論文
- Influence of Effective Masses on the Oscillation of Fowler-Nordheim Tunneling in Thin SiO_2 MOS Capacitors
- Measurememt of Ge/Si Ratio of SiGe-Layer on Si Substrate Using Total-Reflection X-Ray Fluorescence
- Impact of Negative-Bias Temperature Instability on the Lifetime of Single-Gate CMOS Structures with Ultrathin (4–6 nm) Gate Oxides
- Impact of Negative-Bias Temperature Instability on the Lifetime of Single-Gate CMOS Structures with Ultrathin(4-6nm)Gate Oxides
- Si Surface Cleaning by Si_2H_6-H_2 Gas Etching and Its Effects on Solid-Phase Epitaxy
- A Buried-Collector Layer by Arsenic Diffusion from an Oxidized Arsenic-Implanted Amorphous Silicon
- Scanning Tunneling Spectroscopy of Nanofeatures on Silver-Selenide Surface
- Electron Trapping Inducedby High-Energy Ionizing Radiation in SiO_2
- Evaluation of the Electron Cyclotron Resonance Plasma Process Using a Microwave Twin-Lead Line Probe