A Buried-Collector Layer by Arsenic Diffusion from an Oxidized Arsenic-Implanted Amorphous Silicon

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概要

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• The development of a buried-collector layer by arsenic diffusion from oxidized arsenic-implanted amorphous silicon and the effect of solid phase epitaxy (SPE) layer formation on the quality of the arsenic-diffused buried collector are elucidated. To break up the native oxide and to grow the SPE layer at the interface, the arsenic pile-up during the oxidation of the arsenic-implanted chemical vapor deposition (CVD) silicon is necessary. The crystallinity of the buried layer formed by the arsenic diffusion from the oxidized arsenic-implanted amorphous silicon is superior to that formed from the oxidized arsenic-implanted polysilicon.

• 社団法人応用物理学会の論文
• 1990-10-20

著者

• Tsunoda Yoshihiro

  Ntt Lsi Laboratories Nippon Telegraph And Telephone Corporation

関連論文

• A Buried-Collector Layer by Arsenic Diffusion from an Oxidized Arsenic-Implanted Amorphous Silicon

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