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National Institute Of Advanced Industrial Science And Technology Power Electronics Research Center | 論文
- Control by Ammonium Ion of the Change from Step-Up to Step-Down Photophobically Responding Cells in the Flagellate Alga Euglena gracilis
- Syntheses and Properties of Oligothiophenes with Cyano and Hexyl Groups
- Study on the Si(111) √×√ - Ag Surface Structure by X-Ray Diffraction : Surfaces, Interfaces and Films
- Characterization of amorphous-Si/1ML-Ge/Si(001) Interface Structure by X-ray Standing Waves
- Static Correlation and Dynamical Properties of Tb^-moments in Tb_2Ti_2O_7 : Neutron Scattering Study
- Neutron Scattering Study of the Spin Correlation in the Spin Ice System Ho_2Ti_2O_7
- High Sensitive Imaging of Atomic Arrangement of Ge Clusters Buried in a Si Crystal by X-ray Fluorescence Holography
- Position Determination by Laser Marks of Biological Samples Placed on a Plastic Track Detector and Inactivation of B. subtilis Spores by a Single Heavy Ion
- Improvement of DC Characteristics in AlGaN/GaN Heterojunction Field-Effect Transistors Employing AlN Spacer Layer
- AIN/AlGaN/GaN Metal Insulator Semiconductor Heterostructure Field Effect Transistor
- Time-Resolved X-Ray Diffraction from a Silicon Crystal Irradiated by a Q-Switched Nd:YAG Laser : Condensed Matter
- X-Ray Standing Wave Method Applied to the Characterization of InGaAsP Alloy Semiconductor Thin Film
- Observation of X-Ray Diffraction Spots from the (√×√)R30°Bi Structure on the Si(111) Surface under the Condition of Large Incidence Angle
- Structure Analysis of the NiSi_2/(111)Si Interface by the X-Ray Standing Wave Method
- Effects of High-k Passivation Films on AlGaN/GaN HEMT
- p-type InGaN Cap Layer for Normally-off Operation in AlGaN/GaN HFETs
- High breakdown voltage AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor with TiO2/SiN gate insulator (Special issue: Solid state devices and materials)
- High Breakdown Voltage AlGaN/GaN MIS-HEMT with TiO_2/Si_3N_4 Gate Insulator
- High Speed AlGaN/GaN MIS-HEMT with High Drain and Gate Breakdown Voltages
- GaN Crystal Growth on Sapphire Substrate Using Islandlike GaN Buffer Formed by Repetition of Thin-Layer Low-Temperature Deposition and Annealing in rf-Plasma Molecular Beam Epitaxy