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National Institute Of Advanced Industrial Science And Technology Power Electronics Research Center | 論文
- Improvement of GaN Crystal Quality in RF-MBE Using Thin Low-Temperature-Grown GaN Buffer Layers
- Impact of Vicinal Sapphire (0001) Substrates on the High-Quality AIN Films by Plasma-Assisted Molecular Beam Epitaxy
- Gate-Length Dependence of DC Characteristics in Submicron-Gate AlGaN/GaN HEMTs
- Roles of Si Irradiation during the Growth Interruption on GaN Film Qualities in Plasma-Assisted Molecular Beam Epitaxy : Semiconductors
- Indium Roles on the GaN Surface Studied Directly by Reflection High-Energy Electron Diffraction Observations : Semiconductors
- High-Quality GaN Layers on c-Plane Sapphire Substrates by Plasma-Assisted Molecular-Beam Epitaxy Using Double-Step AlN Buffer Process
- Temperature Characteristics AlGaN/GaN Heterojunction Field Effect Transistors
- Advantages of AlN/GaN Metal Insulator Semiconductor Field Effect Transistor using Wet Chemical Etching With Hot Phosphoric Acid : Semiconductors
- Induction of Non-repairable DNA Strand Breaks by N-ion Beams
- Growth of Droplet-Free AlGaN Buffer Layer with +c Polarity by Molecular Beam Epitaxy
- Electrical Characteristics of Interface Defects in Oxides Grown at 1200℃ in Dry Oxygen Ambient on Silicon Carbide and Their
- Annealing Properties of Defects in Ion-Implanted 3C-SiC Studied Using Monoenergetic Positron Beams
- Defects in Ion-Implanted 3C-SiC Probed by a Monoenergetic Positron Beam
- Limitation of Nitrogen Incorporation into the Hydrogenated Amorphous Carbon Nitride Films Formed from the Dissociative Excitation Reaction of CH_3CN
- High Current Gain AlGaAs/GaAs Heterojunction Bipolar Transistors with Carbon-Doped Base Grown by Gas Source Molecular Beam Epitaxy Using Trimethylamine Alane as the Aluminum Source
- Carbon-Doped-Base AlGaAs/GaAs HBTs Grown by Gas-Source Molecular Beam Epitaxy Using Only Gaseous Sources
- Gas Source MBE Growth of GaAs/AlGaAs Heterojunction Bipolar Transistor with a Carbon Doped Base Using Only Gaseous Sources
- Three-Dimensional Optical Data Storage in Vitreous Silica
- Growth of High-Mobility 3C-SiC Epilayers by Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
- Photoluminescence of Unintentionally Doped and N-Doped 3C-SiC Grown by Chemical Vapor Deposition : Semiconductors and Semiconductor Devices