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National Inst. Advanced Interdisciplinary Res. Tsukuba Jpn | 論文
- Effects of Chemical Composition and Morphology of Substrate Surfaces on Crustallinity of Ultrathin Hydrogenated Microcrystalline Silicon Films
- Selective Area Growth of Si on Thin Insulating Layers for Nanostructure Fabrication
- Ohmic Contact Properties of Magnesium Evaporated onto Undoped and P-doped a-Si: H
- A Photoluminescence Study of Amorphous-Microcrystalline Mixed-Phase Si: H Films
- Determination of the Optical Constants of Thin Films Using Photoacoustic Spectroscopy
- Fabrication of High-Quality Nb/Al-AlO_x-Al/Nb Junctions by a Simple Process
- Fabrication and Evaluation of Superconducting Quantum Interference Devices with Nb/Al-AlO_x-Al/Nb Edge Junctions
- Performance Evaluation of Representative Figure Method for Proximity Effect Correction : Electron Beam Lithography
- Performance Evaluation of Representative Figure Method for Proximity Effect Correction
- Representative Figure Method for Proximity Effect Correction [II]
- Representative Figure Method for Proximity Effect Correction
- Hydrogen-Initiated Nucleation and Growth of Hydrogenated Amorphous Silicon on Graphite
- Substrate Temperature Dependence of Deuteron Bonding States in Deuterated Amorphous Silicon Studied by ^2H Nuclear Magnetic Resonance
- ^1H Nuclear Magnetic Resonance Study of Hydrogen Distribution in Partially Deuterated Hydrogenated Amorphous Silicon
- Structural Differences between Hydrogenated and Deuterated Amorphous Silicon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition
- The Staebler-Wronski Effect on Defect Luminescence in Hydrogenated Amorphous Silicon
- ^P Nuclear Magnetic Resonance Study of Local Bonding Configuration of Phosphorus in Amorphous Silicon-Hydrogen-Phosphorus Alloys
- Silicon-29 Nuclear Magnetic Resonance Study of Amorphous-Microcrystalline Mixed-Phase Hydrogenated Silicon
- Characteristics of Schottky Barrier Diodes in P-doped Amorphous Si : H : III-3: AMORPHOUS SOLAR CELLS (2) : Characterization
- Anomalous Optical and Structural Properties of B-Doped a-Si:H