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Nanomaterials Microdevices Research Center Osaka Institute Of Technology | 論文
- Back-Gated Field Effect in a Double Two-Dimensional Electron Gas Structure
- Si Atomic-Planar-Doping in GaAs Made by Molecular Beam Epitaxy
- A New Heterostructure for 2DEG System with a Si Atomic-Planar-Doped AlAs-GaAs-AlAs Quantum Well Structure Grown by MBE
- A Study on the Potential Structure of the Barrier in Ba_K_xBiO_3/Natural-Barrier/Au Structures
- Detection and Printability of Shifter Defects in Phase-Shifting Masks II. : Defocus Characteristics
- Detection and Printability of Shifter Defects in Phase-Shifting Masks : Photolithography
- Pattern Transfer Characteristics of Transparent Phase Shifting Mask : Photolithography
- Reflectioru High Energy Electron Diffraction Observation of Dynamic Ion Beam Mixing Process in Titanium Nitride Crystal Growth
- Electron Beam Induced Damage of MOS Gate Oxide
- Electron Beam Induced Damage of MOS Gate Oxide
- Control of the Surface Charge and Improved Corrosion Resistance of Stainless Steel by the Combined Use of Gaseous Ozone and Heat (特集/エネルギーと表面技術)
- Comparison of the Efficacies of Gaseous Ozone and Sodium Hypochlorite in Cleaning Stainless Steel Particles Fouled with Proteins
- Molecular Beam Epitaxial Growth and Characterization of the Vertically Aligned InAs Quantum Dots Embedded in Al_Ga_As
- Self-Assembling Molecular Beam Epitaxial Growth of the InAs Quantum Dots Embedded in Deep Al_Ga_As Barriers
- Actively Mode-Locked and Q-Switched Phosphate Glass Oscillator
- Actively Mode-Locked and Q-Switched YAG Laser with Precise Synchronizability
- Absorbed-Current Polarization Detector with Fe(110) Target
- Performance and Stability of ZnO/ZnMgO Hetero-MIS FETs
- Increased Electron Concentration in InAs/AlGaSb Heterostructures Using a Si Planar Doped Ultrathin InAs Quantum Well
- Characteristics of Enzyme-Based ZnO/Zn0.7Mg0.3O Heterojunction Field-Effect Transistor as Glucose Sensor