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Nanomaterials Microdevices Research Center Osaka Institute Of Technology | 論文
- Analysis of Overlay Accuracy in 0.14μm Device Fabrication using Synchrotron Radiation Lithography
- Increased Electron Concentration in InAs/AlGaSb Heterostructures Using a Si Planar Doped Ultrathin InAs Quantum Well
- Surface Structure of Zr-O/W(100) System at 1700 K
- Anomaly in Sputtering on Titanium Nitride Film Growth by Post-Irradiation Processing
- Evaluation of Acid Diffusibility in a Chemical Amplification Resist Using Acidic Water-Soluble Film
- Work Function Change Measured by Electron Beam Chopping Technique as Applied to Oxygen-Adsorbed W(100) at High Temperature
- Ion-Assisted Crystal Growth by Post Irradiation as Applied to Nitride Formatiorn
- Characterization of Ion Implantation Dose by Raman Scattering and Photothermal Wave Techniques
- Explosion Hazard of Gaseous Ozone
- Ozone Passivation Technique for Corrosive Gas Distribution System
- Spin-Polarized Scanning Electron Microscope Equipped with a Thumb-Size Spin Detector : Techniques, Instrumentations and Measurement
- Spin-Polarized Scanning Electron Microscope for Analysis of Complicated Magnetic Domain Structures
- High Spatial Resolution Spin-Polarized Scanning Electron Microscope
- Spin-Polarized Scanning Electron Microscopy
- Spin-Polarized Scanning Electron Microscope for Magnetic Domain Observation
- Evaluation of Device Charging in Ion Implantation : Ion Beam Process
- Evaluation of Device Charging in Ion Implantation
- Observation of Magnetic Stripe Domains in Ni-Fe Films Using Spin-Polarized Scanning Electron Microscopy
- Quantitative Analysis of the Role of Contacts in the Measurements of Integral Quantum Hall Effects
- A Pseudomorphic In_Ga_As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature