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Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology | 論文
- A Novel Process for Fabrication of Gated Silicon Field Emitter Array Taking Advantage of Ion Bombardment Retarded Etching
- Proposed spin-photon memory as an optical buffer memory for high-speed networks ((社)日本磁気学会第170回研究会 第4回光機能磁性デバイス・材料専門研究会共催 光と磁気のシナジー技術--次世代ストレージ・光機能磁性デバイス実現のための新技術動向)
- Enhancing Noise Margins of Fin-Type Field Effect Transistor Static Random Access Memory Cell by Using Threshold Voltage-Controllable Flexible-Pass-Gates
- T_c vs n Relationship for Multilayered High-T_c Superconductors(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Spin-Transfer Switching and Thermal Stability in an FePt/Au/FePt Nanopillar Prepared by Alternate Monatomic Layer Deposition
- Pulse-Shaped Emissions with Time Delay in Single Crystals of Thiophene/Phenylene Co-Oligomers
- X-ray Magnetic Circular Dichroism and Photoemission Study of the Diluted Ferromagnetic Semiconductor Zn_Cr_xTe
- X-ray Absorption and X-ray Magnetic Circular Dichroism Studies of a Monatomic Fe(001) Layer Facing a Single-Crystalline MgO(001) Tunnel Barrier
- Fabrication of Dual-disks Microlasers in Thiophene/Phenylene Co-oligomers
- Elastic Constant in Magnetic Fields and Singlet-Triplet State of Heavy Fermion Superconductor PrOs_4Sb_(Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties)
- Unconventional Variation of T_c in the Multilayered Cuprate Superconductor (Cu,C)Ba_2Ca_4Cu_5O_y(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- FinFET-Based Flex-Vth SRAM Design for Drastic Standby-Leakage-Current Reduction
- Time-Resolved Observation of Laser-Induced Surface Reaction for Si/Cl_2 System Using Second-Harmonic Generation
- Observation of Etching Reaction for Si/XeF_2 System Using Second-Harmonic Generatiorn
- Fabrication of ultrathin Si Channel Wall For Vertical Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor (DG MOSFET) by Using Ion-Bombardment-Retarded Etching (IBRE)
- Demonstration of Dopant Profiling in Ultrathin Channels of Vertical-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect-Transistor by Scanning Nonlinear Dielectric Microscopy
- Device Design Consideration for V_-Controllable Four-Terminal Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor
- P-Channel Vertical Double-Gate MOSFET Fabricated by Utilizing Ion-Bombardment-Retarded Etching Processs
- Novel Process for Vertical Double-Gate (DG) Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) Fabrication
- An Improved Method for Obtaining Single-Phase Sr_2MoO_4 under Controlled Ultralow Oxygen Partial Pressure : Superconductors