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NTT Photonics Laboratories | 論文
- FERN CONSTITUENTS : CYCLOHOPENOL AND CYCLOHOPANEDIOL, NOVEL SKELETAL TRITERPENOIDS FROM RHIZOMES OF PYRROSIA LINGUA
- Fern Constituents : Triterpenoids Isolated from Rhizomes of Pyrrosia lingua. I
- InAlN barrier layer for GaN-based FET : InAlN/AlGaN/GaN heterostructures with high electron mobility and flat surface
- InAlN barrier layer for GaN-based FET : InAlN/AlGaN/GaN heterostructures with high electron mobility and flat surface
- High Temperature Characteristics of Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Ultrathin Al_2O_3/Si_3N_4 Bilayer
- DC and RF Characteristics in Al_2O_3/Si_3N_4 Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors
- Al_2O_3/Si_3N_4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Structure : Low Gate Leakage Current with High Transconductance
- Comparison of AlGaN/GaN insulated gate heterostructure field-effect transistors with ultra-thin Al_2O_3/Si_3N_4 bilayer and with Si_3N_4 single layer
- Al_2O_3/Si_3N_4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Layers : Low Gate Leakage Current with High Transconductance Operation
- InP/InGaAs Uni-Traveling-Carrier Photodiodes(Special Issue on Advanced Optical Devices for Next Generation Photonic Networks)
- Layered-Oxide-Isolation (LOXI) Metal-Semiconductor Field Effect Transistor (MESFET) for Low Parasitic Source-Drain Capacitance
- High-Speed Response of Uni-Traveling-Carrier Photodiodes
- Optical Characterization of Impact Ionization in Flip-Chip-Bonded InP-Based High Electron Mobility Transistors
- Influence of Minority Hole Injection on Current Gain Characteristics in AlGaAs/GaAs Heterojunction Bipolar Transistors
- Extrinsic Base Surface Recombination Current in Surface-Passivated InGaP/GaAs Heterojunction Bipolar Transistors
- Surface Damage of Reactive Ion Beam Etched GaAs
- Suppression of Emitter Size Effecton Current Gainin AlGaAs/GaAs HBTs
- Emitter-Base Junction Size Effect on Current Gain H_ of AlGaAs/GaAs Heterojunction Bipolar Transistors
- Blue/Violet Light Generation by Ultrashort Pulse Injection into Photonic Crystal Fibers(Advanced Nano Technologies,Microoptomechatronics)
- Large Area InP Submicron TWO-Dimensional (2D) Periodic Structures Fabricated by TWO-Time Laser Holography