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NTT Microsystem Integration Laboratories | 論文
- Thick-Dielectric Formation and MOSFET Reliability with Spin-Coating Film Transfer and Hot-Pressing Technique for Seamless Integration Technology
- Characteristics of Fingerprint Sensing on Capacitive Fingerprint Sensor LSIs with a Grounded Wall Structure
- Characteristics of Narrow Channel MOSFET Memory Based on Silicon Nanocrystals
- Effects of Interface Traps on Charge Retention Characteristics in Silicon-Quantum-Dot-Based Metal-Oxide-Semiconductor Diodes
- Characteristics of Narrow Channel MOSFET Memory Based on Silicon Nanocrystals
- The First Radioastronomical Observation with Photonic Local Oscillator
- 10-Mbps Short-Range Baseband Wireless Communications via Quasi-Static Electric Fields
- Over-10-dBm output uni-traveling-carrier photodiode module integrating a power amplifier for wireless transmissions in the 125-GHz band
- Single-Beam Overwrite with a New Erase Mode of In_3 SbTe_2 Phase-Change Optical Disks : Media
- Single-Beam Overwrite with a New Erase Mode of In_3SbTe_2 Phase-Change Optical Disks
- Gain Improvement of a 2.4-GHz/5-GHz CMOS Low Noise Amplifier by Using High-Resistivity Silicon-on-Insulator Wafers(Devices and Circuits for Next Generation Multi-Media Communication Systems)
- A 1GHz/0.9mW CMOS/SIMOX Divide-by 128/129 Dual-Modulus Prescaler Using a Divide-by 2/3 Synchronous Counter
- An Experimental Full-CMOS Multigigahertz PLL LSI Using 0.4μm Gate Ultrathin-Film SIMOX Technology (Special Issue on Sub-Half Micron Si Device and Process Technologies)
- Influence of Doping Gradient near a Channel End on Parasitic Series Resistance of Thin-Film Fully-Depleted Metal-Oxide-Semiconductor Field-Effect Transistors
- Body-Charge-Induced Switching Characteristics in Fully Depleted Silicon-on-Insulator Digital Circuits
- Improving the Characteristics of Ultra-Thin-Film Fully-Depleted Metal-Oxide-Semiconductor Field Effect Transistors on SIMOX (Separation by IMplanted OXygen) by Selective Tungsten Deposition on Source and Drain Region
- 300-kilo-Gate Sea-of-Gate Type Gate Arrays Fabricated Using 0.25-μm-Gate Ultra-Thin-Film Fully-Depleted Complementary Metal-Oxide-Semiconductor Separation by IMplanted OXygen (CMOS/SIMOX) Technology with Tungsten-Covered Source and Drain
- Properties of Full-Color Fluorescent Display Devices Excited by a UV Light-Emitting Diode
- Full-Color Fluorescent Display Devices Using a Near-UV Light-Emitting Diode
- Crystallizing Mechanism and Recording Properties of In_3SbTe_2 Phase-Change Optical Disks