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NTT LSI laboratories | 論文
- High Power and Stable Oscillations in the RTD Pair Oscillator ICs Fabricated with Metamorphic RTDs
- Novel Resonant Tunneling Diode Oscillator Capable of Large Output Power Operation(THz Devices,Heterostructure Microelectronics with TWHM2005)
- In Situ Observation of Surface Morphology Evolution Corresponding to Reflection High-Energy Electron Diffraction Oscillation during Molecular Beam Epitaxy of Gallium Arsenide
- In Situ Observation of Monolayer Steps during Molecular Beam Epitaxy of Gallium Arsenide by Scanning Electron Microscopy
- Behavior of Reaction Products of Poly-Si in Electron Cyclotron Resonance Ion Stream Etching and Its Application to Stable and High-Selectivity Etching
- InP/InGaAs Double Heterojunction Bipolar Transistors Grown on Si
- InP/InGaAs Heterostructure Bipolar Transistors Grown at Low Temperature by Metalorganic Chemical Vapor Deposition
- Enhancement of the Annular Illumination Effect Using a Printing Process Resolvable with Low Image Contrast
- A vMOS Cellular-Automaton Device for Differential-of-Gaussian Filtering
- Directional Single-Electron-Tunneling Junction
- Properties of High Heat-Resistance μc-SiC_x:H Emitter Silicon HBT's
- Silicon HBT with a Low-Resistivity Amorphous SiC_x Emitter
- Fabrication of Rectangular Holes along 2×4 Unit Cells on GaAs(001) Reconstructed Surface with a Scanning Tunneling Microscope
- Growth Processes of GaAs Grown by Atomic Layer Epitaxy Revealed by Atomic Force Microscopy
- Scanning Tunneling Microscopy of (NH_4)_2S_x-Treated GaAs Surfaces Annealed in Vacuum
- CsBrを電子注入材料とした有機EL素子の発光特性
- On-Chip Multimedia Real-Time OS and Its MPEG-2 Applications
- Two-Dimensionally Confined Carrier Injection Phenomena in Sub-10-nm-Thick SOI Insulated-Gate pn-Junction Devices
- A Global Router Optimizing Timing and Area for High-Speed Bipolar LSIs (Special Section on VLSI Design and CAD Algorithms)
- A 2.6-Gbps/pin SIMOX-CMOS Low-Voltage-Swing Interface Circuit (Special Issue on Ultra-High-Speed LSIs)