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NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan | 論文
- Level Broadening Effect in Electron Tunneling through Double Quantum Dots with Different $g$ Factors
- Coherence Time of Nuclear Spins in GaAs Quantum Well Probed by Submicron-Scale All-Electrical Nuclear Magnetic Resonance Device
- Electrical Characterization of Terphenyl-Based Molecular Devices
- Atomic Force Microscopy Observation of Membrane Proteins Suspended over Carbon Nanotube Network
- Pauli Spin Blockade and Influence of Hyperfine Interaction in Vertical Quantum Dot Molecule with Six-Electrons
- Mott Transition and Spin Structures of Spin-1 Bosons in Two-Dimensional Optical Lattice at Unit Filling
- Giant Magneto-Piezoresistance and Internal Friction in a Two-Dimensional Electron System
- Epitaxial Growth of AlGaN/GaN High-Electron Mobility Transistor Structure on Diamond (111) Surface
- In0.75Ga0.25As Quantum Point Contacts Utilizing Wrap-Gate Geometry
- Efficient Structure for Deep-Ultraviolet Light-Emitting Diodes with High Emission Efficiency: A First-Principles Study of AlN/GaN Superlattice
- Graphene Growth from Spin-Coated Polymers without a Gas
- Universal Superconducting Ground State in Nd1.85Ce0.15CuO4 and Nd2CuO4
- Energy Transfers between Er3+ Ions Located at the Two Crystalographic Sites of Er2O3 Grown on Si(111)
- Single-Electron Stochastic Resonance Using Si Nanowire Transistors
- Dependence of Electron $g$-Factor on Barrier Aluminum Content in GaAs/AlGaAs Quantum Wells
- Effect of Excitons in AlGaAs/GaAs Superlattice Solar Cells
- Anisotropy of Magnetoresistance Hysteresis around the $\nu=2/3$ Quantum Hall State in Tilted Magnetic Field
- Study of Graphene Growth by Gas-Source Molecular Beam Epitaxy Using Cracked Ethanol: Influence of Gas Flow Rate on Graphitic Material Deposition
- Bending at Thinned GaAs Nodes in GaP-based Free-standing Nanowires
- Difference in Self-Assembling Morphology of Peptide Nanorings