スポンサーリンク
NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan | 論文
- Effect of Nitrogen on Diffusion in Silicon Oxynitride
- Epitaxial Trilayer Graphene Mechanical Resonators Obtained by Electrochemical Etching Combined with Hydrogen Intercalation
- Nucleus and Spiral Growth of N-face GaN(000\bar{1}) Obtained by Selective-Area Metalorganic Vapor Phase Epitaxy
- Field-Effect Transistor with Deposited Graphite Thin Film
- Exciton and Biexciton Emissions from Single GaAs Quantum Dots in (Al,Ga)As Nanowires
- Superconducting Nanowire Single-Photon Detector with Ultralow Dark Count Rate Using Cold Optical Filters
- Transistor Properties of Novel Organic Conducting Polymers Bearing Tetrathiafulvalene Units in the Backbone
- Self-Spreading Supported Lipid Bilayer Passing through Single Nanogap Structure: Effect of Position of Dyes in Lipid Molecules
- Growth of Twinned Epitaxial Layers on Si(111)$\sqrt{3}\times\sqrt{3}$-B Studied by Low-Energy Electron Microscopy
- Necessity of Superposition of Macroscopically Distinct States for Quantum Computational Speedup
- Graphene-modified Interdigitated Array Electrode : Fabrication, Characterization, and Electrochemical Immunoassay Application
- Quantum Hall Effect and Carrier Scattering in Quasi-Free-Standing Monolayer Graphene
- 30aCA-13 Fermi surface reconstruction driven by orbital rearrangement in cuprates