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NTT Advanced Technology Corporation | 論文
- DC and RF Characteristics in Al_2O_3/Si_3N_4 Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors
- Still Tagging an Aligned Japanese/English Corpus
- Copper Damascene Interconnection with Tungsten Silicon Nitride Diffusion Barrier Formed by Electron Cyclotron Resonance Plasma Nitridation
- Diffusion Barrier Mechanism of Extremely Thin Tungsten Silicon Nitride Film Formed by ECR Plasma Nitridation
- Dislocation Reduction in GaAs on Si by Thermal Cycles and InGaAs/GaAs Strained-Layer Superlattices
- Material Quality in GaAs-on-Si Grown by Metalorganic Molecular Beam Epitaxy
- Domain Structures of As-Adsorbed Si(100) Surface and GaAs Overlayer
- Growth of GaAs on Si Substrates by Metalorganic MBE Using Triethylgallium and Arsenic
- RHEED Intensity Observation during TEGa-As_4 Alternate Supply Growth of GaAs : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials
- A New Fabrication Process for Low-Loss Millimeter-Wave Transmission Lines on Silicon
- Estimating Performance Degradation in Reformers for PAFC Power Plants by Using Increases in Steam-Reformed and Burner-Exhaust Gas Temperatures
- Standardization Activities on Broadband Access Systems
- Pixel-Parallel Image-Matching Circuit Schemes for a Single-Chip Fingerprint Sensor and Identifier(Electronic Circuits)
- Fingerprint Identification System on a Single Chip Based on Advanced Circuit and Device Technologies
- Study of Optical Properties of Zinc Oxide Thin Film Implanted with Nitrogen by Combinatorial Ion Implantation Techniques
- Microfabrication Technology for Millimeter-Wave Photonic Systems on Si
- Annual Letter of CS Technical Committee : Technical Meetings, 16^ Communication Systems Workshop (CSWS), etc
- Adaptive Clock Recovery Method Utilizing Proportional-Integral-Derivative (PID) Control for Circuit Emulation( The Next Generation Ethernet Technologies)
- Multi-quantum structures of GaAs/AlGaAs Free-standing Nanowires
- Nanoholes in InP and C60 Layers on GaAs Substrates by Using AlGaAs Nanowire Templates