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Musashino Office Hitachi Device Engineering Co. Ltd. | 論文
- Test Structure and Experimental Analysis of Emitter-Base Reverse Voltage Stress Degradation in Self-Aligned Bipolar Transistors (Special Issue on Microelectronic Test Structure)
- High-Speed High-Density Self-Aligned PNP Technology for Low-Power Complementary Bipolar ULSIs
- High-Frequency, Low-Noise Si Bipolar Transistor Fabricated Using Self-Aligned Metal/IDP Technology (Special Issue on High-Frequency/speed Devices in the 21st Century)
- HCI-Free Selective Epitaxial SiGe Growth by LPCVD for 80-GHz BiCMOS Production
- DC and AC Performances in Selectively Grown SiGe-Base HBTs (Special Issue on High-Frequency/speed Devices in the 21st Century)
- Simplified Distribution Base Resistance Model in Self-Aligned Bipolar Transistors (Special Issue on Microelectronic Test Structure)
- Suppression of B Outdiffusion by C Incorporation in Ultra-High-Speed SiGeC HBTs
- Interaction of Hydrogenated Silicon Nitride Films with Indium Tin Oxide
- Suppression of B Outdiffusion by C Incorporation in Ultra-High-Speed SiGeC HBTs
- Suppression of B Outdiffusion by C Incorporation in Ultra-High-Speed SiGeC HBTs