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Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation | 論文
- Effect of Growth Temperature on Si MBE Film
- A New Simple Configuration for a Wide Margin Josephson Adder using High Gain Direct Coupled Logic Gates : LATE NEWS
- Ionizing Radiation Effects in MOS Capacitors with Very Thin Gate Oxides
- Field-Emission Liquid Aluminum Ion Source
- Carrier-Induced Energy-Gap Shrinkage in Current-Injection GaAs/AlGaAs MQW Heterostructures
- Room Temperature Operation of Al_Ga_Sb/GaSb Multi-Quantum Well Lasers Grown by Molecular Beam Epitaxy
- Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs-GaAs Superlattices
- Current-Drift Suppressed InP MISFETs with New Gate Insulator
- The Distribution of the Excess Vacancies in the Bulk at the Diffusion of Phosphorus into Silicon
- Phosphorus Diffusion in Silicon Free from the Surface Effect under Extrinie Conditions
- High Speed Enhancement-Mode GaAs MESFET Integrated Circuits : B-1: GaAs IC
- Chemical Vapor Deposition and Characterization of a Phosphorus-Nitride (P_3N_5) Gate Insulator for an Inversion-Mode InP MISFET : B-6: III-V DEVICE TECHNOLOGY
- Current Drift Phenomena and Spectroscopic Measurement Method for Insulator Trap Level Parameters in InP MISFETs
- Influence of Ambient Gas on the PL intensity from InP and GaAs : B-5: LASERS (2)
- Prevention of Surface Corrugation Thermal Deformation for InGaAsP/InP DFB Lasers
- InGaAsP/InP Dual-Wavelength BH Laser
- Abnormality at the Interface of p-Type InP Grown by LPE
- 1.5 μm Region BH Laser Array
- Low Threshold Current CW Operation of InP/GaInAs Buried Heterostrueture Lasers
- 1.5μm InGaAsP/InP BH Lasers on p-Type InP Substrates