Ionizing Radiation Effects in MOS Capacitors with Very Thin Gate Oxides
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1983-09-20
著者
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Sano Koichi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation:(pre
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SHIONO Noboru
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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SHIMAYA Masakazu
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Shiono Noboru
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Shimaya Masakazu
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation:(pre
関連論文
- Ionizing Radiation Effects in MOS Capacitors with Very Thin Gate Oxides
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- Surface State Formation during Long-Term Bias-Temperature Stress Aging of Thin SiO_2-Si Interfaces
- Emitter Perimeter-to-Area Ratio Effects on High-Frequency Transistor Current Gain and Its Degradation