Emitter Perimeter-to-Area Ratio Effects on High-Frequency Transistor Current Gain and Its Degradation

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概要

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• The influence of the emitter-base junction surface property on current gain (h_<FE>) and on its degradation at moderate current levels has been investigated. Various transistors with different emitter permeter-to-area rations (L_E/A_E) ware fabricated on one wafer with SiO_2 or Si_3N_4 junction passivation. The influence of the emitter-base junction surface recombination current on the h_<FE> is analyzed by referring to the h^<-1>_<FE> vs. L_E/A_E relation. The influence on h_<FE> degradation is also analyzed by monitoring changes in the h^<-1>_<FE>) vs.L_E/A_E relation during accelerated life tests. It is shown that the h_<FE> of high frequency transistors, whose f_T was several GH_Z, decreases to about 50% of that of surface influence independent transistors. Surface recombination current change is a major factor in inducing the h_<FE> change during life tests.

• 社団法人応用物理学会の論文
• 1979-06-05

著者

• Shiono Noboru

  Musashino Electrical Communication Laboratory Ntt

• Shiono Noboru

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

関連論文

• Ionizing Radiation Effects in MOS Capacitors with Very Thin Gate Oxides
• Defects in a Gate Oxide Grown after the LOCOS Process
• Surface State Formation during Long-Term Bias-Temperature Stress Aging of Thin SiO_2-Si Interfaces
• Emitter Perimeter-to-Area Ratio Effects on High-Frequency Transistor Current Gain and Its Degradation

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