Defects in a Gate Oxide Grown after the LOCOS Process
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概要
- 論文の詳細を見る
Defects in a thin (500 A) gate oxide, grown after the LOCOS process, are found to be distributed everywhere in the gate area as well as along the edge of the LOCOS pattern. The defect density is found to depend strongly on various process conditions of the LOCOS process, especially on the ambient gases in field oxidation. A new model for defect-inducing is proposed and examined by several experiments. The model is based in 1) diffusion of NH_3gas, produced at the top of the silicon nitride Si_3N_4 by the reaction of Si_3N_4 with H_2O, to the SiO_2-Si interface through Si_3N_4-SiO_2;and 2) on the formation of nitride by the reaction of diffused NH_3 with silicon substrates. Treatment by preliminary oxidation and etching-off of the oxide before gate oxidation is shown to be effective for removing the nitride induced by the LOCOS process at the SiO_2-Si interface.
- 社団法人応用物理学会の論文
- 1979-05-05
著者
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Shiono Noboru
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Nakajima Osaake
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Hashimoto Chisato
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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MURAMOTO Susumu
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Muramoto Susumu
Musashino Electrical Communication Laboratory
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Muramoto Susumu
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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