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Mirai-asrc Aist | 論文
- Theoretical Analysis of Interstitial Boron Diffusion and Its Suppression Mechanism with Nitrogen in Amorphous HfO_2
- Flat-band Voltage Tunability and No Depletion Effect of Poly-Si Gate CMOS with Nanometer-size Metal Dots at the Poly-Si/Dielectric Interface
- Observation of Dipole Layer Formed at High-k Dielectrics/SiO_2 Interface with X-ray Photoelectron Spectroscopy
- Nonlinear Al Concentration Dependence of the HfAlO_x/Si Conduction Band Offset Studied by Internal Photoemission Spectroscopy
- Poly-Si Comparable Fermi-Level Pinning of Fully Silicided Platinum Gates on HfO_2
- Novel Si Quantum Memory Structure with Self-Aligned Stacked Nanocrystalline Dots
- Experimental Analysis of Carrier Charging Characteristics in Si Nanocrystal Floating Gate Memory
- Permittivity Enhancement of Hf_Si_xO_2 Film with High Temperature Annealing
- Anomalous Difference between Replacements of D-H and H-D in Oxide Ceramics by Exposure to Air Contaning H_2O and D_2O Vapors
- Power Consumption of Hybrid Circuits of Single-Electron Transistors and Complementary Metal-Oxide-Semiconductor Field-Effect Transistors
- Silicon Planar Esaki Diode Operating at Room Temperature
- SET/CMOS Hybrid for Future Low-Power LSI : Experimental Demonstration, Power Estimation, and Strategy for Its Reduction
- Challenge to new silicon devices
- A New Design Scheme for Logic Circuits with Single Electron Transistors
- High-Electron-Mobility Ge n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y_2O_3
- Higher-k Scalability and Leakage Current Reduction of SiO-Doped HfO in Direct Tunneling Regime
- Weak Temperature Dependence of Non-Coulomb Scattering Component of HfAlO_x-Limited Inversion Layer Mobility in n^+poly-Si/HfAlO_x/SiO_2 n-MOSFETs