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Mirai-asrc Aist | 論文
- Design Methodology for La_2O_3-Based Ternally Higher-κ Dielectrics
- A New Hf-based Dielectric Member, HfLaOx, for Amorphous High-k Gate Insulators in Advanced CMOS
- Generalized Model of Oxidation Mechanism at HfO_2/Si Interface with Post-Deposition Annealing
- Dielectric Constant Increase of Yttrium-Doped HfO_2 by Structural Phase Modification
- Far Infrared Study of Structural Distortion and Transformation of HfO_2 by Introducing a Slight Amount of Si
- Stable Observation of the Evolution of Leakage Spots in HfO_2/SiO_2 stacked structures by UHV-C-AFM
- Difference between O_2 and N_2 Annealing Effects on CVD-SiO_2 Film Quality Studied by the Time-Dependent OCP Measurement
- Advantages of Ge (111) Surface for High Quality HfO_2/Ge Interface
- Analytical Single-Electron Transistor(SET)Model for Design and Analysis of Realistic SET Circuits
- New Approach to Negative Differential Conductance with High Peak-to-Valley Ratio in Silicon
- Mobility Enhancement of SOI MOSFETs due to Subband Modulation in Ultrathin SOI Films
- Mobility Enhancement of SOI MOSFETs Due to Subband Modulation in Ultra-Thin SOI Films
- Comparative Studies on Oxygen Diffusion Coefficients for Amorphous and γ-Al_2O_3 Films using ^O Isotope
- Importance of Leakage Current Noise Analysis for Accurate Lifetime Prediction of High-k Gate Dielectrics
- Degradation Mechanism of HfAlO_x/SiO_2 Stacked Gate Dielectric Films through Transient and Steady State Leakage Current Analysis
- Impact of Initial Traps on TDDB and NBTI Reliabilities in High-k Gate Dielectrics
- The first principles calculations of Fermi level pinning in FUSI/PtSi/HfO_2/Si system induced by local distortion of HfO_2
- Theoretical analysis of the Fermi level pinning in HfO_2/Si system induced by the interface defect states
- Gate Depletion Effect Reduction and Flat-band Voltage Control in Poly-Si/HfAlO_x MOSFETs with Nanometer TaN Dots at the Top Interface
- Effects of Aluminum and Nitrogen Profile Control on Electrical Properties of HfAlON Gate Dielectric MOSFETs