Weak Temperature Dependence of Non-Coulomb Scattering Component of HfAlO_x-Limited Inversion Layer Mobility in n^+poly-Si/HfAlO_x/SiO_2 n-MOSFETs

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概要

• 論文の詳細を見る
• 2004-09-15

著者

• YASUDA N.

  MIRAI-ASET, AIST

• OTA H.

  MIRAI-ASRC, AIST

• TORIUMI A.

  MIRAI-ASRC, AIST

• Toriumi A.

  Mirai-asrc Aist

• HISAMATSU H.

  MIRAI-ASET, AIST

• Hisamatsu H.

  Mirai-aset Aist

• Yasuda N.

  Mirai-aset Aist

関連論文

• Reliable Extractions of EOT and V_ in Poly-Si Gate High-k MISFETs through Advanced Modeling of Gate and Substrate Capacitances
• Nonlinear Al Concentration Dependence of the HfAlO_x/Si Conduction Band Offset Studied by Internal Photoemission Spectroscopy
• Poly-Si Comparable Fermi-Level Pinning of Fully Silicided Platinum Gates on HfO_2
• Weak Temperature Dependence of Non-Coulomb Scattering Component of HfAlO_x-Limited Inversion Layer Mobility in n^+poly-Si/HfAlO_x/SiO_2 n-MOSFETs

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