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Microelectronics Centre School Of Electrical And Electronics Engineering Nanyang Technological Unive | 論文
- DC Characterization of Metamorphic InP/InGaAs Heterojunction Bipolar Transistors at Elevated Temperature
- Studies on the Degradation of InP/InGaAs/InP Double Heterojunction Bipolar Transistors Induced by Silicon Nitride Passivation
- A Unified Chemical Bonding Model for Defect Generation in a-SiH: Photo-Induced Defects in Photovoltaic Devices and Current-Induced Defects in TFTs.
- Experimental Determination of Ultrathin Oxide Thickness Using Conventional Capacitance-Voltage Analysis
- Improved Extrapolation Method of Ultrathin Oxide Thickness Using C-V Characteristics of Metal-Oxide-Senliconductor Device : Semiconductors
- A Flash-lamp-Pumped Nd : YAG Laser with Dual-Telescopic Optics Configuration
- Femtosecond Self-Mode-Locked La_MgNd_xAl_O_ Laser Pumped by a Laser Diode
- Analysis of Bending Creep Behavior of Silicon Nitride Ceramics at Elevated Temperature
- A High Sensitivity, Phase Sensitive d_ Meter for Complex Piezoelectric Constant Measurement
- Post-Stress Interface-Trap Generation in P-Channel Metal-Oxide-Semiconductor Field-Effect-Transistors after Hot-Electron Stress
- Characterization and Modeling of Microwave Noise in InP/InGaAs Composite Channel High Electron Mobility Transistors (HEMTs)
- Post-Stress Interface-Trap Generation in P-Channel Metal-Oxide-Semicondutor Field-Effect-Transistors after Hot-Electron Stress