Studies on the Degradation of InP/InGaAs/InP Double Heterojunction Bipolar Transistors Induced by Silicon Nitride Passivation
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-02-28
著者
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Wang H
Microelectronics Centre School Of Electrical And Electronics Engineering Nanyang Technological Unive
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Yang H
Kwangju Inst. Sci. And Technol. Kwangju Kor
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Yang Hong
Microelectronics Centre School Of Electrical And Electronics Engineering Nanyang Technological Unive
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WANG Hong
Microelectronics Centre, School of Electrical and Electronics Engineering, Nanyang Technological Uni
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NG Geok
Microelectronics Centre, School of Electrical and Electronics Engineering, Nanyang Technological Uni
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RADHAKRISHNAN K.
Microelectronics Centre, School of Electrical and Electronics Engineering, Nanyang Technological Uni
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Ng G
Nanyang Technological Univ. Singapore Sgp
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Ng Geok
Microelectronics Centre School Of Electrical And Electronics Engineering Nanyang Technological Unive
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Yang H
Department Of Materials Science And Engineering Kwangju Institute Of Science And Technology
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Wang Hong
Microelectronics Centre School Of Electrical And Electronics Engineering Nanyang Technological Unive
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Yang H
China Pharmaceutical Univ. Naning Chn
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Radhakrishnan K.
Microelectronics Centre School Of Electrical And Electronics Engineering Nanyang Technological Unive
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Wang Hong
Microelectronics Centre School Of Electrical And Electronic Engineering Nanyang Technological Univer
関連論文
- DC Characterization of Metamorphic InP/InGaAs Heterojunction Bipolar Transistors at Elevated Temperature
- Studies on the Degradation of InP/InGaAs/InP Double Heterojunction Bipolar Transistors Induced by Silicon Nitride Passivation
- A Unified Chemical Bonding Model for Defect Generation in a-SiH: Photo-Induced Defects in Photovoltaic Devices and Current-Induced Defects in TFTs.
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- Analysis of Bending Creep Behavior of Silicon Nitride Ceramics at Elevated Temperature
- A High Sensitivity, Phase Sensitive d_ Meter for Complex Piezoelectric Constant Measurement
- Characterization and Modeling of Microwave Noise in InP/InGaAs Composite Channel High Electron Mobility Transistors (HEMTs)