Characterization and Modeling of Microwave Noise in InP/InGaAs Composite Channel High Electron Mobility Transistors (HEMTs)
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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Wang Hong
Microelectronics Centre School Of Electrical And Electronics Engineering Nanyang Technological Unive
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Zeng Rong
Microelectronics Centre School Of Electrical And Electronic Engineering Nanyang Technological Univer
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LIU Yuwei
Microelectronics Centre School of Electrical and Electronic Engineering Nanyang Technological Univer
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Liu Yuwei
Microelectronics Centre School Of Electrical And Electronic Engineering Nanyang Technological Univer
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Wang Hong
Microelectronics Centre School Of Electrical And Electronic Engineering Nanyang Technological Univer
関連論文
- DC Characterization of Metamorphic InP/InGaAs Heterojunction Bipolar Transistors at Elevated Temperature
- Studies on the Degradation of InP/InGaAs/InP Double Heterojunction Bipolar Transistors Induced by Silicon Nitride Passivation
- A High Sensitivity, Phase Sensitive d_ Meter for Complex Piezoelectric Constant Measurement
- Characterization and Modeling of Microwave Noise in InP/InGaAs Composite Channel High Electron Mobility Transistors (HEMTs)