Post-Stress Interface-Trap Generation in P-Channel Metal-Oxide-Semicondutor Field-Effect-Transistors after Hot-Electron Stress

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概要

• 論文の詳細を見る

• Post-stress electron discharging and interface trap generation in p-channel Metal Oxide Semiconductor Field-Effect-Transistors (MOSFETs) after drain avalanche hot-electron stress (DAHE) are investigated. It was found that the effect of electron discharging must be taken into account for the interpretation of charge-pumping characteristics after DAHE stress. To clarify the physical mechanism underlying post-stress interface trap generation, the effect of hot-electron injection and post-stress gate bias are studied. electron discharging and post-stress interface trap generation are strongly dependent on the gate bias polarity and magnitude. A physical model is proposed which is based on mechanisms involving carrier injection, recombination and the breaking of Si–H bonds at the Si/SiO2 interface.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1996-04-15

著者

• ANG Chew-Hoe

  Chartered Semiconductor Manufacturing Ltd.

• Tse Man-siu

  Microelectronics Centre School Of Electrical And Electronics Engineering Nanyang Technological Unive

• Wong Terence

  Microelectronics Centre School Of Electrical And Electronics Engineering

• Wong Terence

  Microelectronics Centre, School of Electrical and Electronics Engineering,

• Tse Man-Siu

  Microelectronics Centre, School of Electrical and Electronics Engineering,

• Ang Chew-Hoe

  Chartered Semiconductor Manufacturing Pte Ltd., 60 Woodlands Industrial Park D,

関連論文

• Power-LaW Dependence of Charge Trapping on Injected Charge in Very Thin SiO_2 Films : Semiconductors
• Post-Stress Interface-Trap Generation in P-Channel Metal-Oxide-Semiconductor Field-Effect-Transistors after Hot-Electron Stress
• Post-Stress Interface-Trap Generation in P-Channel Metal-Oxide-Semicondutor Field-Effect-Transistors after Hot-Electron Stress

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