Post-Stress Interface-Trap Generation in P-Channel Metal-Oxide-Semiconductor Field-Effect-Transistors after Hot-Electron Stress

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1996-04-15

著者

• ANG Chew-Hoe

  Chartered Semiconductor Manufacturing Ltd.

• Ang Chew-hoe

  Chartered Semiconductor Manyfacturing Pte Ltd.

• Tse Man-siu

  Microelectronics Centre School Of Electrical And Electronics Engineering Nanyang Technological Unive

• Wong Kin-shun

  Microelectronics Centre School Of Electrical And Electronics Engineering Nanyang Technological Unive

関連論文

• Power-LaW Dependence of Charge Trapping on Injected Charge in Very Thin SiO_2 Films : Semiconductors
• Post-Stress Interface-Trap Generation in P-Channel Metal-Oxide-Semiconductor Field-Effect-Transistors after Hot-Electron Stress
• Post-Stress Interface-Trap Generation in P-Channel Metal-Oxide-Semicondutor Field-Effect-Transistors after Hot-Electron Stress

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