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Memory Research And Development Division Hyundai Electronics Industries Co. Ltd. | 論文
- Dependence of Switching Characteristics on Fabrication Process and Capacitor Size for Pt/SBT/Pt Ferroelectric Capacitor
- Dependence of Switching Characteristics on Fabrication Process and Capacitor Size for Pt/SBT/Pt Ferroelectric Capacitor
- Dependence of Switching Characteristics on Fabrication Process and Capacitor Size for Pt/SBT/Pt Ferroelectric Capacitor
- Ferroelectric Performance of Fully Integrated(Bi, La)_4Ti_3O_ Capacitor for Ferroelectric Memory
- Ferroelectric Performance of Fully Integrated(Bi, La)_4Ti_3O_ Capacitor for Ferroelectric Memory
- Characterization of Polarization Switching Behavior of Pt/SrBi_2Ta_2O_9/Pt Ferroelectric Capacitors in Ferroelectric Random Access Memory
- Estimation of Imprint Failure Lifetime in FeRAM with Pt/SrBi_2Ta_2O_9/Pt Capacitor(Special Issue on Nonvolatile Memories)
- Atomic Force Microscope Study of Two-Dimensional Dopant Delineation by Selective Chemical Etching
- Coercive Voltage Shift of a Ferroelectric Capacitor during Interconnect Metal Etch
- Coercive Voltage Shift of a Ferroelectric Capacitor during Interconnect Metal Etch
- Coercive Voltage Shift of a Ferroelectric Capacitor during Interconnect Metal Etch
- Stress in Inter-level Dielectric Oxides on Integrated SBT-based Ferroelectric Memories
- Stress in Inter-level Dielectric Oxides on Integrated SBT-based Ferroelectric Memories
- Stress in Inter-level Dielectric Oxides on Integrated SBT-based Ferroelectric Memories
- Control of Boron Lateral Diffusion by Nitrogen Implantation in Sub-0.15mm CMOS Devices
- Control of Boron Lateral Diffusion by Nitrogen Implantation in Sub-0.15mm CMOS Devices
- Control of Boron Lateral Diffusion by Nitrogen Implantation in Sub-0.15mm CMOS Devices
- The Piezoceramic Transformer Based LCD Backlight Inverter Control IC
- The Piezoceramic Transformer Based LCD Backlight Inverter Control IC
- Degradation Behavior in the Remnant Polarization of SrBi_2Ta_2O_9 Thin Films by Hydrogen Annealing and its Recovery by Post-annealing.