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Matsushita Electric Industrial Co. | 論文
- Low-Temperature Preparation of Pb(Zr,Ti)O_3 Thin Filmson (Pb,La)TiO_3 Buffer Layer by Multi-Jon-Beam Sputtering
- Structural Properties of Silicon Oxide Films Prepared by the RF Substrate Biased ECR Plasma CVD Method
- Properties of Hydrogenated Amorphous Silicon Prepared by ECR Plasma CVD Method : Condensed Matter
- Preparation of High-Conductivity p-Type a-Si:H Films by Penning Discharge
- Preparation of La-Modified Lead Titanate Thin Films by Rf-Magnetron Sputtering Method and Their Pyroelectric Properties
- Preparation of Pyroelectric Pb_La_xTi_O_3 Thin Films from Ceramic Target by RF Magnetron Sputtering
- Characterization of Pb(Zr, Ti)O_3 Thin Films Prepared by Multi-Ion-Beam Sputtering
- Substrate Potential Effects on Low-Temperature Preparation of SrTiO_3 Thin Films by RF Magnetron Sputtering
- Ferroelectric PbTiO_3 Thin Films Prepared by Multi-Ion-Beam Sputter and Ion-Assisted Deposition
- Formation of n^+ a-Si:H Thin Layer by Ion-Doping Technique
- β-SiC Formation by Low-Energy Ion-Doping Technique
- Plasma Irradiation Effects on Nd-Ce-Cu-O and La-Sr-Cu-O Thin Films
- Plasma Ion-Doping Technique with 20 kHz Biased Electron Cyclotron Resonance Discharge : Techniques, Instrumentations and Measurement
- Effects of Deposition Method on the Properties of Silicon Nitride and Silicon Oxynitride Films : Surfaces, Interfaces and Films
- Incorporation of Constituent Atoms of Transparent Conductive Films into Hydrogenated Amorphous Silicon via Gas Phase : Surfaces, Interfaces and Films
- Coagulation of In Atoms in Hydrogenated Amorphous Silicon Islands Deposited on ITO Films : Condensed Matter
- Large Area Doping Technique Using an Ion Source of rf Discharge with Magnetic Field : Techniques, Instrumentations and Measurement
- Thermal Stability of Hydrogen in Silicon Nitride Films Prepared by ECR Plasma CVD method : Surfaces, Interfaces and Films
- Properties of Silicon Oxynitride Films Prepared by ECR Plasma CVD Method : Surfaces, Interfaces and Films
- Hydrogen Concentration and Bond Configurations in Silicon Nitride Films Prepared by ECR Plasma CVD Method