スポンサーリンク
Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation | 論文
- Dissolution Inhibitors for 193-nm Chemically Amplified Resists
- Highty Transparent Chemically Amplified ArF Excimer Laser Resists by Absorption Band Shift for 193 nm Wavelength
- Hybrid-Type InGaAlP/GaAs Distributed Bragg Reflectors for InGaAlP Light-Emitting Diodes
- Emission Properties of InGaAlP Visible Light-Emitting Diodes Employing a Multiquantum-Well Active Layer
- Thermal Decomposition of Dissolution Inhibitor in Chemically Amplified Resist during Prebake Process
- Simulation Study on Phase-Shifting Masks for Isolated Patterns : Photolithography
- Simulation Study on Phase-Shifting Masks for Isolated Patterns
- Charge-reducing Effect of Chemically Amplified Resist in Electron-Beam Lithography
- 7Li NMR及びESRによるハ-ドカ-ボン中へのリチウム吸蔵状態の解析
- Optimization of a High-Performance Chemically Amplified Positive Resist for Electron-Beam Lithography
- High-Efficiency InGaAlP Visible Light-Emitting Diodes
- Internal Stress Distribution Estimation in Liquid-Encapsulated Czochralski Grown GaAs Single Crystals Using Measured Temperature on Dummy Crystals
- Persistent Enhanced Conductivity Induced by Light Irradiation in Hydrazone-Polycarbonate Dispersions
- ポリアクリロニトリル系炭素のリチウム吸蔵放出反応に及ぼす異種元素とナノポアの影響
- Recent Progress in KrF Excimer Laser Lithography (Special Issue on Opto-Electronics and LSI)