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Materials Research Laboratory | 論文
- Emitter Edge-Thinning Effect on InGaAs/InP Double-Heterostructure-Emitter Bipolar Transistor
- Mobility Enhancement in Highly Strained δ-Doped InP/InGaAs/InP Heterostructure with InGaP Cap Layer Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
- 固体の熱物性値研究の諸問題について : 熱伝導率研究の動向
- Growth of Highly Strained InGaAs Quantum Wells by Metalorganic Chemical Vapor Deposition with Application to Vertical-Cavity Surface-Emitting Laser
- Post-Implantation Thermal Annealing Effect on the Gate Oxide of Triple-Well-Structure
- Structural Phase Transition of AgO_x Sandwiched Between ZnS-SiO_2 Protective Layers Under Thermal and Laser Pulse Annealing for Super-Resolution Near-Field Recording
- The Characteristics of Reactively Sputtered AgO_x Films Prepared at Different Oxygen Flow Ratios and Its Effect on Super-Resolution Near-Field Properties
- Investigations of δ-Doped InAlAs/InGaAs/InP High-Electron-Mobility Transistors with Linearly Graded In_xGa_As Channel
- Double-Transconductance-Plateau Characteristics in InGaAs/GaAs Real-Space Transfer High Electron Mobility Transistor
- Low Dark Current InGaAs(P)/InP p-i-n Photodiodes
- An Improved In_Al_As_Sb_/InP Heterostructure Utilizing Coupled δ-Doping InP Channel : Semiconductors
- An Improved In_Ga_P/GaAs Double Heterostructure-Emitter Bipolar Transistor Using Emitter Edge-Thinning Technique
- Application of Doping-Superlattice Collector Structure for GaAs Bipolar Transistor
- Novel In_Al_As/In_xGa_As Metamorphic δ-HEMT's on GaAs Substrate with Various Channel Designs
- Analytic Modeling for Drain-Induced Barrier Lowering Phenomenon of the InGaP/InGaAs/GaAs Pseudomorphic Doped-Channel Field-Effect Transistor
- Effect of Chromium, Aluminum and Nickel on Microstructure and Reverse-S Type Creep Rupture Strength of High Cr Ferritic Heat Resistant Steels