スポンサーリンク
Materials Department and NICP ERATO/JST Group, University of California, Santa Barbara, CA 93106, U.S.A. | 論文
- Characterization of Planar Semipolar Gallium Nitride Films on Sapphire Substrates
- Structural Characterization of Thick GaN Films Grown on Free-Standing GaN Seeds by the Ammonothermal Method Using Basic Ammonia
- Optical Properties of GaN/AlN(0001) Quantum Dots Grown by Plasma-Assisted Molecular Beam Epitaxy
- Effect of the Nucleation Conditions on the Polarity of AlN and GaN Films Grown on C-face 6H-SiC
- Characterization of a-Plane GaN/(Al, Ga)N Multiple Quantum Wells Grown via Metalorganic Chemical Vapor Deposition
- Growth, Structural, and Electrical Characterizations of N-Polar InAlN by Plasma-Assisted Molecular Beam Epitaxy
- Growth of Bulk GaN with Low Dislocation Density by the Ammonothermal Method Using Polycrystalline GaN Nutrient
- Growth of Bulk GaN Crystals by the Basic Ammonothermal Method
- Characterization of Planar Semipolar Gallium Nitride Films on Spinel Substrates
- Structural and Electroluminescence Characteristics of Nonpolar Light-Emitting Diodes Fabricated on Lateral Epitaxially Overgrown $a$-Plane GaN
- Stability of $(1\bar{1}00)$ $m$-Plane GaN Films Grown by Metalorganic Chemical Vapor Deposition
- Green Semipolar (20\bar{2}\bar{1}) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth
- Characterization of $a$-Plane GaN/(Al,Ga)N Multiple Quantum Wells Grown via Metalorganic Chemical Vapor Deposition