スポンサーリンク
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, Japan | 論文
- Anomalous positive V_ shift in HfAlO_x MOS gate stacks
- Mechanical Strength of Multilayered Dielectric Structures Measured by Laser-Pulse Generated Surface-Acoustic-Wave Technique
- Comparative Studies on Oxygen Diffusion Coefficients for Amorphous and γ-Al_2O_3 Films using ^O Isotope
- Impact of Initial Traps on TDDB and NBTI Reliabilities in High-k Gate Dielectrics
- Si-Capped Annealing of HfO_2-based Dielectrics for Suppressing Interface Layer Growth and Oxygen Out-Diffusion
- The first principles calculations of Fermi level pinning in FUSI/PtSi/HfO_2/Si system induced by local distortion of HfO_2
- Theoretical analysis of the Fermi level pinning in HfO_2/Si system induced by the interface defect states
- Effects of Aluminum and Nitrogen Profile Control on Electrical Properties of HfAlON Gate Dielectric MOSFETs
- Theoretical Analysis of Interstitial Boron Diffusion and Its Suppression Mechanism with Nitrogen in Amorphous HfO_2
- Flat-band Voltage Tunability and No Depletion Effect of Poly-Si Gate CMOS with Nanometer-size Metal Dots at the Poly-Si/Dielectric Interface
- Nondestructive characterization of dielectric stack structures by laser-pulse-generated surface acoustic wave analysis
- The structural origin of determining the coefficient of thermal expansion for porous silica low-k films
- Nondestructive characterization of temperature-dependent backbone Si-O-Si structure in porous silica films by in-situ Fourier-transform infrared spectroscopy
- Infrared Complex Dielectric Function Analysis for Chemical Bonding Structure of Porous Silica Low Dielectric Constant Films
- Integration of Self-Assembled Porous Silica in Low-$k$/Cu Damascene Interconnects
- Plasma-Enhanced Co-Polymerization of Organo-siloxane and Hydrocarbon for Low-$k$/Cu Interconnects
- Plasma Etch Rates of Porous Silica Low-$k$ Films with Different Dielectric Constants
- Recovery from Plasma-Process-Induced Damage in Porous Silica Low-$k$ Films by Organosiloxane Vapor Annealing
- Silicon-Atom Induced Fermi-Level Pinning of Fully Silicided Platinum Gates on HfO2 Dielectrics
- Low-Threshold-Voltage HfOxN p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Partially Silicided Platinum Gate Electrode