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Kansai Electronics Research Laboratories, NEC Corporation | 論文
- Power Heterojunction FET with High Breakdown Voltage for X- and Ku-Band Applications (Special Issue on Microwave and Millimeterwave High-power Devices)
- Millimeter-Wave Flip-Chip MMIC Structure with High Performance and High Reliability Interconnects (Special Issue on High-Frequency/speed Devices in the 21st Century)
- 1.0V Operation Power Heterojunction FET for Digital Cellular Phones
- Wide-Band CDMA Distortion Characteristics of an AlGaAs/InGaAs/AlGaAs Heterojunction FET under Various Quiescent Drain Current Operations (Special Issue on High-Frequency/speed Devices in the 21st Century)
- Single 1.5V Operation Power Amplifier MMIC with SrTiO_3 Capacitors for 2.4GHz Wireless Applications(Special Issue on Microwave and Millimeter-Wave Module Technology)
- Power Heterojunction FETs for Low-Voltage Digital Cellular Applications
- SrTiO_3 Capacitor with Relative Dielectric Constant of 200 on GaAs Substrate at Microwave Frequency
- High Performance HJFET MMIC with Embedded Gate Technology for Microwave and Millimeter-Wave IC's Using EB Lithography (EMMIE) (Special Issue on High-Frequency/speed Devices in the 21st Century)
- Nanolithography Using a Chemically Amplified Negative Resist by Electron Beam Exposure
- Low Distortion Characteristics of Power Heterojunction FET under Low Quiescent Drain Current Condition for 1.9GHz Wide-Band CDMA Cellular Phones