Low Distortion Characteristics of Power Heterojunction FET under Low Quiescent Drain Current Condition for 1.9GHz Wide-Band CDMA Cellular Phones
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人電子情報通信学会の論文
- 1998-09-07
著者
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Bito Y.
Kansai Electronics Research Laboratories Nec Corporation
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Hau G.
Kansai Electronics Research Laboratories, NEC Corporation
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Nishimura B.T.
Kansai Electronics Research Laboratories, NEC Corporation
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Ichihara M.
Personal C&C Research Development Laboratories, NEC Corporation
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Iwata N.
Kansai Electronics Research Laboratories, NEC Corporation
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Nishimura B.t.
Kansai Electronics Research Laboratories Nec Corporation
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Hau G.
Kansai Electronics Research Laboratories Nec Corporation
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Ichihara M.
Personal C&c Research Development Laboratories Nec Corporation