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International SEMATECH | 論文
- Interfacial Layer-Induced Mobility Degradation in High-k Transistors
- Ultra-Short Pulse Current-Voltage Characterization of the Intrinsic Characteristics of High-κ Devices
- Ultra-Short Pulse I-V Characterization of the Intrinsic Behavior of High-κ Devices
- Trapping/De-Trapping Gate Bias Dependence of Hf-Silicate Dielectrics with Poly and TiN Gate Electrode
- Transient Charging and Relaxation in High-k Gate Dielectrics and Their Implications
- Temperature Effects of Constant Bias Stress on n-Channel FETs with Hf-based Gate Dielectric
- Transient charging and relaxation in high-k gate dielectrics and its implications
- Trapping/de-trapping gate bias dependence of Hf-silicate dielectrics with poly and TiN gate electrode
- Temperature effects of constant bias stress on NFETs with Hf-based gate dielectric
- High Performance NMOS Devices Using Ultra-Thin VHP Oxynitride
- Charge Trapping Characteristics of Hafnium Based High-κ Dielectrics with Various Metal Electrodes
- Application of Metastable Phase Diagrams to Silicate Thin Films for Alternative Gate Dielectrics
- Transient Charging and Relaxation in High-k Gate Dielectrics and Their Implications
- Interfacial Layer-Induced Mobility Degradation in High-$k$ Transistors