スポンサーリンク
Institute of Precision Engineering, National Chung Hsing University | 論文
- Analysis of Designing Multichannel Fiber Bragg Gratings with Different Inverse Design Algorithms
- Improvements in for N-Side-Up GaN/Mirror/Si LEDs Using High Reflective Ohmic Contacts
- Surface Texturing for Wafer-Bonded Vertical-Type GaN/Mirror/Si Light-Emitting Diodes
- Improvement in Extraction Efficiency of GaN-Based Light-Emitting Diodes with Textured Surface Layer by Natural Lithography
- Near-Ultraviolet InGaN/GaN Light-Emitting Diodes Grown on Patterned Sapphire Substrates
- Improvement in GaN-based light-emitting diodes by surface texturization with natural lithography
- GaN/Mirror/Si Light-Emitting Diodes for Vertical Current Injection by Laser Lift-Off and Wafer Bonding Techniques
- Characterization of Large-Area AlGaInP/Mirror/Si Light-Emitting Diodes Fabricated by Wafer Bonding
- High-Power AlGaInP Light-Emitting Diodes with Patterned Copper Substrates by Electroplating
- Ion-Implantation Treatment(Ba, Sr)TiO_3 Thin Films
- Etching Characteristics and Mechanism of Ba_Sr_TiO_3 Thin Films in an Inductively Coupled Plasma
- Thermal Stability of Co-Sputtered Ru-Ti Alloy Electrodes for Dynamic Random Access Memory Applications
- Rapid-Thermal-Processed BaTiO_3 Thin Films Deposited by Liquid-Source Misted Chemical Deposition
- Characterization of Thin-Film Electroluminescent Devices with Multiple Ta_2O_5 Interlayers Incorporated into SrS:Pr,Ce Phosphor
- Effects of Transparent Conductive Layers on Characteristics of InGaN-Based Green Resonant-Cavity Light-Emitting Diodes
- High-Brightness Wafer-Bonded Indium-Tin Oxide/Light-Emitting Diode/Mirror/Si
- Wafer-Bonded AlGaInP/Au/AuBe/SiO_2/Si Light-Emitting Diodes
- Etching Characteristics of (Ba, Sr)TiO_3 Thin Films in an Inductively Coupled Plasma
- Low-Temperature-Induced Oxygen Precipitation Retardation Phenomenon in Czochralski Silicon : Effect of High-Temperature Preannealing and Other Related Phenomena
- Chemical-Mechanical Lift-Off Process for InGaN Epitaxial Layers