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Institute of Microelectronics, Peking University and Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, No. 5 Yiheyuan Road, Haidian District, Beijing 100871, P. R. China | 論文
- Simulation Study of Intrinsic Parameter Fluctuations in Variable-Body-Factor Silicon-on-Thin-Box Metal Oxide Semiconductor Field Effect Transistors
- Triple-Gate Fin Field Effect Transistors with Fin-Thickness Optimization to Reduce the Impact of Fin Line Edge Roughness
- Hydrogen Annealing Induced the Enhancement of Ferromagnetism in Cr-Doped TiO2 Anatase Films
- Monte Carlo Simulation of Band-to-Band Tunneling in Silicon Devices
- Effects of Shell Strain on Valence Band Structure and Transport Properties of Ge/Si1-xGex Core–Shell Nanowire
- Complementary Metal Oxide Semiconductor Compatible Hf-Based Resistive Random Access Memory with Ultralow Switching Current/Power
- Simulation of Retention Behavior for the Phase Change Memory
- The Effect of Current Compliance on the Resistive Switching Behaviors in TiN/ZrO2/Pt Memory Device
- Improved Memory Characteristics of A Novel TaN/Al
- Optimization of Conductive Filament of Oxide-Based Resistive-Switching Random Access Memory for Low Operation Current by Stochastic Simulation