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Institute of Applied Physics. University of Tsukuba | 論文
- Surface Diffusion of Bi_2Sr_2CuO_ Thin Films Grown by Molecular Beam Epitaxy
- Bi_2Sr_2CuO_x Thin Films with (011) Vicinal Surfaces Fabricated on Vicinal LaSrGaO_4(110) by Molecular Beam Epitaxy
- Two-Dimensional Epitaxial Growth of Bi_2Sr_2CuO_x on Tilted SrTiO_3(001) Substrates Studied by Reflection High Energy Electron Diffraction
- Layer-by-Layer Growth of Bi-Sr-Ca-Cu-O Superconducting Films by Molecular Beam Epitaxy
- Role of Excess Bi in SrBi_2Ta_2O_9 Thin Film Prepared Using Chemical Liquid Deposition and Sol-Gel Method
- Epitaxial Growth of GaN on Sapphire (0001) Substrates by Electron Cyclotron Resonance Molecular Beam Epitaxy
- Growth Mechanism of Surface Dots Self-Assembled on InP (311)B Substrate
- Effects of Atomic Hydrogen on the Growth of GaN by RF-Molecular Beam Epitaxy
- Growth of GaN by Atomic Hydrogen-Assisted Molecular Beam Epitaxy
- Preparation of Ferroelectric Sr_Bi_Ta_2O_9 Thin Films by Misted Deposition Method Using Alkoxide Solution(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- Formation of Quantum Dot Structures by Atomic Hydrogen Assisted Selective Area Molecular Beam Epitaxy
- Enhanced Solid-Phase Crystallization of Amorphous Si by Plasma Treatment Using Reactive Ion Etching
- Selective Solid-Phase Crystallization of Amorphous Si by Oxygen Plasma Treatment
- Fiber-Optic Pulse Delay Using Composite Zone Plates for Very Fast Optoelectronics : Waves, Optics and Quantum Electronics
- Elementary Processes in Atomic Hydrogen-Assisted GaAs Molecular Beam Epitaxy
- Low Temperature Surface Cleaning of InP by Irradiation of Atomic Hydrogen
- Atomic Image Observation of Hydrogen-Saturated Si(100) Prepared by Atomic Hydrogen Irradiation
- Selective Growth of GaAs by Molecular Beam Epitaxy
- Low Dislocation Density GaAs on Vicinal Si(100) Grown by Molecular Beam Epitaxy with Atomic Hydrogen Irradiation
- Low-Temperature Substrate Annealing of Vicinal Si(100) for Epitaxial Growth of GaAs on Si