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Institut fur Festkorperphysik, Technische Universitat Berlin | 論文
- InAs/GaAs Quantum Dots Grown by Metalorganic Chemical Vapor Deposition ( Quantum Dot Structures)
- Progress in Quantum Dot Lasers : 1100 nm, 1300 nm, and High Power Applications
- Progress in Quantum Dot Lasers : 1100nm, 1300nm and High Power Application
- InAs-GaAs Quantum Pyramid Lasers:In Situ Growth, Radiative Lifetimes and Polarization Properties
- InAs-GaAs Quantum Dot Lasers : in Situ Growth, Radiative Lifetimes and Polarization Properties
- Characteristics of Alpha-Radiation-Induced Deep Level Defects in p-Type InP Grown by Metal-Organic Chemical Vapor Deposition
- Direct Evidence of Nanoscale Carrier Localization in InGaN/GaN Structures Grown on Si Substrates
- Stress Relaxation in Low-Strain AlInN/GaN Bragg Mirrors
- Low-Temperature Metalorganic Vapor Phase Epitaxy (MOVPE) of GaN using Tertiarybutylhydrazine
- Magnetoluminescence Study of Annealing Effects on the Electronic Structure of Self-organized InGaAs/GaAs Quantum Dots
- Atomic Structure of Buried InAs Sub-Monolayer Depositions in GaAs
- Formation and Characterization of AlGaAs Quantum Wires on Vicinal (110) Surfaces
- Infrared Induced Emission from Silicon Quantum Wires
- Direct Evidence of Nanoscale Carrier Localization in InGaN/GaN Structures Grown on Si Substrates